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| RMWB33001 June 2004 RMWB33001 33 GHz Buffer Amplifier MMIC General Description The RMWB33001 is a 4-stage GaAs MMIC amplifier designed as a 33 GHz Buffer Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild RF amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset. The RMWB33001 utilizes our 0.25m power PHEMT process and is sufficiently versatile to serve in a variety of medium power amplifier applications. Features * * * * * 4 mil Substrate Small-signal Gain 24dB (typ.) Saturated Power Out 19dBm (typ.) Voltage Detector Included to Monitor Pout Chip size 3.2mm x 1.2mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+4V Typical) Negative DC Voltage Simultaneous (Vd-Vg) Positive DC Current RF Input Power (from 50 source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +6 -2 8 173 +8 -30 to +85 -55 to +125 130 Units V V V mA dBm C C C/W (c)2004 Fairchild Semiconductor Corporation RMWB33001 Rev. C RMWB33001 Electrical Characteristics (At 25C), 50 system, Vd = +4V, Quiescent Current Idq = 112mA Parameter Frequency Range Gate Supply Voltage1 (Vg) Gain Small Signal (Pin = -15dBm) Gain Variation vs. Frequency Power Output Saturated: (Pin = +1dBm) Drain Current at Psat Power Added Efficiency (PAE): at Psat Input Return Loss (Pin = -15dBm) Output Return Loss (Pin = -15dBm) DC Detector Voltage at Pout = 18dBm Note: 1: Typical range of gate voltage is -0.5 to 0V to set Idq of 112mA. Min 32 20 17 Typ -0.2 24 2.0 19 120 15 12 12 1.0 Max 35 Units GHz V dB dB dBm mA % dB dB V Application Information CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2 mil gap between the chip and the substrate material. Drain Supply Drain Supply Drain Supply Drain Supply Vd1 Vd4 Vd3 Vd2 MMIC Chip RF IN RF OUT Ground (Back of Chip) Gate Supply Vg Output Power Detector Voltage Vdet Figure 1. Functional Block Diagram1 Note: 1: Detector delivers >0.1V DC into 3k load resistor for > +18dBm output power. If output power level detection is not desired, do not connect to detector bond pad. (c)2004 Fairchild Semiconductor Corporation RMWB33001 Rev. C RMWB33001 Figure 2. Schematic of Application Circuit Drain Supply Vd =4 V Bond Wires 10,000 pF 10,000 pF Bond Wires 100 pF 100 pF 100pF 100 pF MMIC Chip RF IN RF OUT 100 pF Bond Wires Ground (Back of Chip) Bond Wires 10,000 pF 3 k 100 pF Gate Supply Vg Output Power Detector Voltage Vdet Note: 1: Detector delivers >0.1V DC into 3k load resistor for > +18dBm output power. If output power level detection is not desired, do not connect to detector bond pad. Figure 3. Chip Layout and Bond Pad Locations Dimensions in mm 0.00 1.19 1.09 0.82 1.34 1.83 2.58 3.19 1.19 1.09 0.725 0.57 0.415 0.725 0.57 0.415 0.10 0.00 0.00 0.10 0.60 2.85 3.09 3.19 0.10 0.00 Chip Size is 3.19mm x 1.19mm X 100m. Back of chip is RF and DC Ground. (c)2004 Fairchild Semiconductor Corporation RMWB33001 Rev. C RMWB33001 Figure 4. Recommended Assembly Diagram Drain Supply Vd = 4 V Die-Attach 80Au/20Sn 10,000pF 10,000pF 5mil Thick Alumina 50 100pF 100pF 100pF 100pF 5 mil Thick Alumina 50 RF Input RF Output 100pF 100pF 3k 10,000pF 2 mil Gap L< 0.015" (4 Places) Gate Supply Vg Output Power Detector Voltage Vdet Note: Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief. Test Procedure for Biasing and Operation CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP. The following sequence of steps must be followed to properly test the amplifier: Step 1: Turn off RF input power. Step 2: Connect the DC supply grounds to the ground of the chip carrier. Slowly apply negative gate bias supply voltage of -1.5V to Vg. Step 3: Slowly apply positive drain bias supply voltage of +4V to Vd. Step 4: Adjust gate bias voltage to set the quiescent current of Idq = 112mA. Step 5: After the bias condition is established, the RF input signal may now be applied at the appropriate frequency band. Step 6: Follow turn-off sequence of: (i) Turn off RF input power, (ii) Turn down and off drain voltage (Vd), (iii) Turn down and off gate bias voltage (Vg). (c)2004 Fairchild Semiconductor Corporation RMWB33001 Rev. C RMWB33001 Performance Data RMWB33001 33 GHz BA, Typical Small Signal Performance 50 Fixture Measurements, Vd=4 V, Idq = 112 mA, T=25C 26 S21 24 S21 (dB) S11 -5 S11, S22 (dB) 25 20 S21 (dB) S11 15 10 S21 5 0 0 5 10 15 20 25 Frequency (GHz) 30 35 -25 -30 40 S22 -15 -20 -5 -10 S11, S22 (dB) 0 30 RMWB33001 33 GHz BA, Typical Small Signal Performance 50 Fixture Measurements, Vd=4 V, Idq = 112 mA, T=25C 0 22 20 -10 -15 18 S22 16 30 31 32 33 34 Frequency (GHz) 35 36 -20 -25 37 RMWB33001 33 GHz BA, Power Output and Gain vs. Power In 50 Fixture Measurements, Vd=4 V, Idq = 112 mA, T=25C 20 26 19 18 17 Pout (dBm) 16 15 14 13 12 11 10 -12 -10 -8 -6 Pin (dBm) -4 -2 0 32 GHz 33 GHz 34 GHz 35 GHz 25 24 23 22 21 20 19 18 17 16 Gain (dB) P3dB (dBm), G3dB (dB) RMWB33001 33 GHz BA, Power Output and Gain at 3 dB Compression vs. Frequency and Temperature, 50 FixtureMeasurements, Vd=4 V, Idq = 112 mA 22 21 20 19 18 17 16 15 14 13 31 32 33 34 Frequency (GHz) 35 36 G3dB (T=75C) P3dB (T=25C) P3dB (T=75C) G3dB (T=25C) (c)2004 Fairchild Semiconductor Corporation RMWB33001 Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM Power247TM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11 |
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